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发明公开
CN101771068A 半导体器件及其制造方法 失效 - 权利终止 转让

半导体器件及其制造方法
摘要：
本发明提供一种半导体器件及其制造方法。提供了一种可以在包括MRAM器件的半导体器件中通过提高对外部磁场的抵抗性来改进MRAM器件的数据留存特性的技术。第一磁屏蔽材料经由第一管芯附着膜设置于管芯焊盘之上。然后，半导体芯片经由第二管芯附着膜装配于第一磁屏蔽材料之上。另外，第二磁屏蔽材料经由第三管芯附着膜设置于半导体芯片之上。也就是说，设置半导体芯片以便由第一磁屏蔽材料和第二磁屏蔽材料夹入中间。这时，在第二磁屏蔽材料的平面面积小于第一磁屏蔽材料的平面面积的同时，第二磁屏蔽材料的厚度比第一磁屏蔽材料的厚度更厚。
摘要（英）：

The invention provides a semiconductor device and method of manufacturing same. The invention provides a technique that can improve the data retention characteristic of an MRAM device by improving the resistance against an external magnetic field in a semiconductor device including the MRAM device. A first magnetic shield material is disposed over a die pad via a first die attach film. Then, a semiconductor chip is mounted over the first magnetic shield material via a second die attach film. Furthermore, a second magnetic shield material is disposed over the semiconductor chip via a third die attach film. That is, the semiconductor chip is disposed so as to be sandwiched by the first magnetic shield material and the second magnetic shield material. At this time, while the planar area of the second magnetic shield material is smaller than that of the first magnetic shield material, the thickness of the second magnetic shield material is thicker than that of the first magnetic shield material.

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