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发明授权
CN101794850B 平行四边形GaN基发光二极管芯片的对称电极 失效 - 权利终止 转让

平行四边形GaN基发光二极管芯片的对称电极
摘要：
本发明公开了一种平行四边形GaN基发光二极管芯片的对称电极，属于LED芯片技术领域。LED芯片形状为非矩形的平行四边形，N型焊盘位于平行四边形的一个角上，N型条形电极自N型焊盘出发沿平行四边形边缘环绕一周，P型电极的焊盘位于平行四边形芯片的中心，P型条形电极首先沿N型焊盘所在角对应的对角线方向分布，然后再平行于平行四边形芯片的边缘分布，在LED芯片内部N电极与P电极对称分布，保证了平行四边形LED芯片的电流分布均匀，从而达到提高平行四边形LED芯片的出光效率和寿命的目的。
摘要（英）：

The invention discloses symmetrical electrodes of a parallelogram GaN-based LED chip, and belongs to the technical field of LED chips. The shape of the LED chip is a non-rectangular parallelogram, an N-shaped pad is positioned on one angle of the parallelogram, an N-shaped strip electrode surrounds one circle along the edges of the parallelogram from the N-shaped pad, the pad of a P-shaped electrode is positioned in the center of the parallelogram chip, the P-shaped strip electrode is first distributed along the diagonal direction corresponding to the angle where the N-shaped pad is positioned and then distributed along the edge of the parallelogram chip, and the N electrode and the P electrode are symmetrically distributed inside the LED chip. Therefore, uniform current distribution of the parallelogram LED chip is ensured, and the aims of improving the light emitting efficiency and prolonging the service life of the parallelogram LED chip are fulfilled.

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