利索-全球专利检索

  1. 登录
  2. 注册
发明公开
CN101825506A 半导体传感器及其制造方法 无效 - 驳回

半导体传感器及其制造方法
摘要：
本发明提供一种膜片不易破损并且传感器灵敏度的偏差也小的半导体传感器以及制造方法。在隔着SiO2膜(23)将Si基板(22)和Si薄膜(24)贴合的SOI基板的下表面形成凹部(26)。Si薄膜(24)的一部分成为作为感压区域的膜片(25)。在凹部(26)的上表面外周部，SiO2膜(23)将膜片(25)的下表面外周部覆盖，并且在凹部26上表面的除外周部之外的区域使膜片(25)的下表面露出。将膜片(25)的下表面外周部覆盖的SiO2膜(23)(加强部23a)在下表面形成锥形，随着从膜片(25)的外周侧朝向膜片(25)的中心部，其膜厚逐渐减薄。
摘要（英）：

This invention provides a semiconductor sensor (21) whose diaphragm (25) is resistant to breakage and in which variations in sensor sensitivity are small. A recess (26) is formed in a bottom surface of an SOI substrate obtained by bonding a Si substrate (22) and a Si thin film (24) with a SiO 2 film (23) interposed therebetween. Part of the Si thin film (24) constitutes the diaphragm (25) functioning as a sensitive region. In a top outer circumference of the recess (26), the SiO 2 film (23) covers a bottom outer circumference of the diaphragm (25) such that a bottom surface of the diaphragm (25) is exposed in its region except the outer circumference at a top surface of the recess (26). The SiO 2 film (23) (reinforcement (23a) covering the bottom outer circumference of the diaphragm (25) tapers off at its bottom surface such that the film thickness gradually decreases from a side of the outer circumference of the diaphragm (25) toward the center of the diaphragm (25).

0/0