The invention relates to a method for intermittently growing single-layer Ge quantum dots with high dimensional homogeneity on a buffer layer by landfill, belonging to the technical field of semiconductor quantum material preparation. In the method, ion beam sputtering technology is adopted and an Si buffer layer with thickness of 20-60nm is intermittently grown on the pretreated silicon substrate material by turning a Ge target and a high-purity Si target, and then the single-layer Ge quantum dots with thickness of 2.0-3.0nm are intermittently grown on the Si buffer layer in a self-assembled manner. Through intermittent growth, the method effectively solves the following problems: multi-layer growth needs to be carried out on the quantum dots to control the dimensional homogeneity of the quantum dots when the quantum dot materials are prepared, the crystallinity and the controllability of the quantum dots are poor, the height-width ratio is low and Ge/Si intermixing is seriously insufficient, and the quantum dot materials used for preparing quantum dot devices are obtained by the method. Besides, the method is low in production cost, good in controllability and easy for industrial production and is simple and efficient.