利索-全球专利检索

  1. 登录
  2. 注册
发明公开
CN101878536A 硅太阳能电池及其制造方法 无效 - 驳回 复审申请

硅太阳能电池及其制造方法
摘要：
公开了硅太阳能电池和其制造方法。所述硅太阳能电池包括：掺杂有第一导电杂质的硅半导体基板；所述基板上的掺杂有第二导电杂质的发射极层，所述第二导电杂质的极性与所述第一导电杂质的极性相反；所述基板的整个表面上的防反射层；穿过所述防反射层并连接到所述发射极层的上电极；以及连接到所述基板的下部的下电极。所述发射极层包括重掺杂有所述第二导电杂质的第一发射极层、和轻掺杂有所述第二导电杂质的第二发射极层。所述第二发射极层的表面电阻在100Ohm/sq至120Ohm/sq的范围内。
摘要（英）：

A silicon solar cell and a method of mapufacturirg the same are disclosed. The silicon solar cell includes a silicon semiconductor substrate doped with first conductive impurities, an emitter layer doped with second conductive impurities having polarities opposite polarities of the first conductive impurities on the substrate, an anti-reflective layer on an entire surface of the substrate, an upper electrode that passes through the anti-reflective layer and is connected to the emitter layer, and a lower electrode connected to a lower portion of the substrate. The emitter layer includes a first emitter layer heavily doped with the second conductive impurities and a second emitter layer lightly doped with the second conductive impurities. A surface resistance of the second emitter layer is 100 Ohm/sq to 120 Ohm/sq.

0/0