The invention discloses a device capable of realizing spin dynamic storage. The device comprises a substrate (10), a buffer layer (20) and a micro-cavity structure (30) which are sequentially grown from the bottom up, wherein the micro-cavity structure (30) comprises a lower reflecting mirror (31), an active region (32) and an upper reflecting mirror (33) which are sequentially grown from the bottom up; and the active region (32) consists of gallium-nitrogen-arsenic (321) and gallium arsenide (322) which are alternatively grown. The device effectively prolongs the relaxation time of electronsin the gallium-nitrogen-arsenic material and lays a solid foundation for the realization of spin dynamic storage and quantum computers by placing the gallium-nitrogen-arsenic material with a long relaxation time in the micro-cavity at the room temperature to serve as the active region and utilizing the strong coupling mechanism of the micro-cavity.