The invention relates to an electrostatic discharge safeguard structure in an integrated circuit, which comprises a first-class electrostatic discharge safeguard component and a second-class electrostatic discharge safeguard component, wherein the first-class electrostatic discharge safeguard component is a diode; the second-class electrostatic discharge safeguard component is a subsection doublestage transistor with a Zener diode; the subsection doublestage transistor with the Zener diode comprises a subsection doublestage transistor, an emitter series resistor, a collector series resistor, a base resistor and the Zener diode; the electrostatic discharge safeguard structure of the integrated circuit provides electrostatic discharge safeguard for an input buffer, an output buffer, a powertrajectory and a ground trajectory; and the electrostatic discharge safeguard component utilizes a subsection doublestage transistor structure in a domain territory and a fictive poly gate structure in each section doublestage transistor to form a series resistor of the Zener diode with low trigger voltage, an emitter and a collector. The invention effectively enhances the electrostatic dischargesafeguard capability of the integrated circuit, reduces the trigger voltage of an electrostatic discharge safeguard circuit, enhances the uniform continuity of the electrostatic discharge safeguard component and effectively saves the domain territory area of the electrostatic discharge safeguard component.