The invention relates to a eutectic method of a semiconductor chip. The method comprises the following steps of: forming a first eutectic layer by taking one side of a base plate as a bearing side and forming a second eutectic layer by taking one side of the semiconductor chip as a bearing side, wherein the first eutectic layer or the second eutectic layer has a hole structure; and performing eutectic connection on the first eutectic layer and the second eutectic layer. The invention also relates to a eutectic structure of the semiconductor chip, which comprises the semiconductor chip, the base plate, and a eutectic connection layer positioned between the semiconductor chip and the base plate, wherein the eutectic connection layer is formed by performing eutectic combination on a first connection layer and a second connection layer which has a hole structure. In the eutectic method and the eutectic structure of the semiconductor chip, which are provided by the embodiment of the invention, the eutectic layer with the hole structure and the other eutectic layer are subjected to eutecticum, so that a more uniform eutectic with stronger binding force is formed between the eutectic layer with the hole structure and the other eutectic layer; therefore, the binding force between a chip and the base plate is further improved.