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发明公开
CN102102196A 化学气相沉积装置的温度控制方法 失效 - 权利终止

化学气相沉积装置的温度控制方法
摘要：
本发明提供了化学气相沉积装置的温度控制方法。该方法可以准确地了解晶座的表面温度与基板的表面温度之间的差异而无需使用复杂并且昂贵的设备。该方法包括以下步骤：检测顶表面上装载有基板的晶座的旋转状态；测量所述晶座的顶表面的温度；基于检测到的旋转状态和测量出的温度来计算所述晶座的顶表面的温度分布；以及基于计算出的温度分布来控制所述晶座的顶表面的温度。
摘要（英）：

Provided is a method in which a difference between a surface temperature of a susceptor and a surface temperature of a substrate is accurately grasped without using a complicated high-priced equipment. A temperature control method for a chemical vapor deposition apparatus includes detecting a rotation state of a susceptor on which a substrate is accumulated on a top surface thereof, measuring a temperature of the top surface of the susceptor, calculating a temperature distribution of the top surface of the susceptor, based on the detected rotation state and the measured temperature, and controlling the temperature of the top surface of the susceptor, based on the calculated temperature distribution.

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