Provided is a method for manufacturing a photoelectric conversion device which can effectively prevent leak of current from an intermediate contact layer via an intermediate contact layer separation groove. The method includes: a step for forming a top layer (91) containing amorphous silicon as a main content; a step for forming on the top layer (91), an intermediate contact layer (93) which is electrically and optically connected to the top layer (91); a step for applying a pulse laser to remove the intermediate layer (93) and forming an intermediate contact layer separation groove (14) which reaches the top layer (91) so as to separate the intermediate contact layer (93); and a step for forming a bottom layer (92) containing microcrystal silicon as a main content on the intermediate contact layer (93) and in the intermediate contact layer separation groove (14), the bottom layer (92) being connected electrically and optically to the intermediate contact layer (93). The pulse laser used for separating the intermediate contact layer (93) has a pulse width in the range from 10 ps to 750 ps.