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发明公开
CN102134054A 用于制造微机电系统装置的方法 有权

用于制造微机电系统装置的方法
摘要：
一种用于制造MEMS装置的方法，其包含：提供单晶体衬底，其具有第一表面和第二表面且具有MEMS区和IC区；在第一表面上在MEMS区中形成SCS质量块；在衬底的第一表面上形成结构介电层，其中结构介电层的介电部件填充于围绕MEMS区中的SCS质量块的空间中，IC区具有电路结构，所述电路结构具有形成于结构介电层中的互连结构；通过蚀刻工艺在第二表面上将单晶体衬底图案化以暴露填充于围绕SCS质量块的空间中的介电部件的一部分；至少对填充于围绕SCS质量块的空间中的介电部分执行各向同性蚀刻工艺。暴露SCS质量块以释放MEMS结构。
摘要（英）：

A method for fabricating MEMS device includes: providing a single crystal substrate, having first surface and second surface and having a MEMS region and an IC region; forming SCS mass blocks on the first surface in the MEMS region; forming a structural dielectric layer over the first surface of the substrate, wherein a dielectric member of the structural dielectric layer is filled in spaces surrounding the SCS mass blocks in the MEMS region, the IC region has a circuit structure with an interconnection structure formed in the structural dielectric layer; patterning the single crystal substrate by an etching process on the second surface to expose a portion of the dielectric member filled in the spaces surrounding the SCS mass blocks; performing isotropic etching process at least on the dielectric portion filled in the spaces surrounding the SCS mass blocks. The SCS mass blocks are exposed to release a MEMS structure.

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