The invention discloses an open-circuit embedding-removing test structure for a trimmer-capacitance MOS (metal oxide semiconductor) varactor and a variable capacitance diode, which comprises a plurality of metal layers and an active area; the plurality of metal layers comprise a top metal layer, a first metal layer connected with the active area, and at least one middle metal layer between the top metal layer and the first metal layer; the first metal layer comprises a loop; the top metal layer is divided into four unconnected port top metal layer areas; the scopes of the areas of the middle metal layer below each area are all in the scopes of the corresponding port top metal layer areas; an earthing port top metal layer area is connected with the middle metal layer area below thereof andthe loop of the first metal layer one by one; and at least one layer of middle metal area below a signal port top metal layer area is removed to cut off the connection between the signal port top metal layer area and the first metal layer. The open-circuit embedding-removing test structure can effectively eliminate parasitic capacitances, and improve the consistency between the parameters of the test structure and the actual circuit parameters.