The invention discloses a non-volatile information storage unit in the technical field of information storage. The unit comprises a substrate material, wherein a metal material is prepared on a substrate and serves as a lower electrode; a ferroelectric material is prepared on the metal of the lower electrode; an oxide semiconductor material is prepared on the ferroelectric material; and a contactelectrode is prepared on the semiconductor material to form a source drain region. A crystallization temperature of the ferroelectric material prepared on a metal electrode in a structure is low and polarization property is good, and an oxide semiconductor on the ferroelectric material can avoid that a high-temperature crystallization process of the ferroelectric material affects the property of the semiconductor. The non-volatile information storage unit is prepared by a simple process, can reduce cost and can realize industrialization easily.