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发明授权
CN102156203B MEMS惯性传感器及其形成方法 有权

MEMS惯性传感器及其形成方法
摘要：
一种MEMS惯性传感器及其形成方法，其中所述MEMS惯性传感器包括：可移动敏感元素；第二衬底和第三衬底；所述可移动敏感元素采用第一衬底形成，所述第一衬底为单晶半导体材料，所述第一衬底包括相对的第一表面和第二表面，所述第一衬底的第一表面上形成有一层或者多层导电层，所述第二衬底结合至所述第一衬底上的一层或者多层导电层的表面，所述第三衬底结合至所述可移动敏感元素的一侧，所述第三衬底和第二衬底分别位于所述可移动敏感元素的相对两侧。本发明通过采用单晶半导体材料制作传感器敏感元素，从而制成较厚的惯性传感器的可移动敏感元件，可以加大质量块的质量，提高所述惯性传感器的灵敏度。
摘要（英）：

A method for forming an MEMS inertial sensor is provided, comprising: providing a first substrate having a first surface and a second surface, wherein providing the first substrate comprises providing a first base substrate and forming at least one conductive layer; providing a second substrate having a third surface and a fourth surface; bonding the first surface of the first substrate and the third surface of the second substrate together to form a first bonding interface; thinning the first base substrate from the second surface of the first substrate to remove part of the first base substrate; and forming a movable element of the MEMS inertial sensor, wherein the at least one conductive layer comprises a shielding layer, and the shielding layer is located between the first base substrate and the first bonding interface.

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