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发明公开
CN102169104A 基于SiC的MOSFET的汽车发动机用氧传感器 无效 - 驳回

基于SiC的MOSFET的汽车发动机用氧传感器
摘要：
本发明公开了一种基于SiC材料的MOSFET的汽车发动机用氧传感器及其制备方法。利用了碳化硅材料的禁带宽度大、击穿电场高、电子饱和漂移速度高、热导率大等良好特性，将其作为N型沟道MOSFET的P型衬底，满足高温工作的要求。在MOSFET结构中，在原有的栅氧层上在生长一层氧敏薄膜材料(如YSZ)，金属栅电极采用金属Pt，该MOSFET型氧敏传感器的沟道可以是表面沟道也可以是埋型沟道。在该传感器中，氧浓度的变化可转变为栅氧层单位面积电容的变化，从而导致阈值电压的变化。同时，本发明还给出该SiCMOSFET型氧敏传感器的制作方法。
摘要（英）：

The invention discloses a SiC-based MOSFET (metal-oxide -semiconductor field effect transistor) oxysensible sensor for an automobile engine and a manufacturing method thereof. Silicon carbide material with the excellent characteristics of wide energy gap, high breakdown electric field, high electron saturated drifting velocity, high heat conductivity and the like is used as a P-type substrate of an N-type channel MOSFET, thereby meeting the requirement of high-temperature working. In the MOSFET structure, a layer of oxysensible film material (such as YSZ: yttria stabilized zirconia) grows on an original gate oxide layer, wherein metal Pt is adopted as a metal gate electrode, and the channel of a MOSFET type oxysensible sensor can be a surface channel and an embedded channel. In the sensor, the change of oxygen concentration can be converted into the change of capacitance of the gate oxide layer in unit area, thereby causing the change of a threshold voltage. Besides, the invention also discloses a method for manufacturing the MOSFET type oxysensible sensor.

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