The invention provides a method for manufacturing an active matrix organic light-emitting diode (AMOLED) apparatus, which comprises the steps of: forming a polysilicon substrate and patterning to form a bottom electrode and a first conducting layer; depositing a grid insulating layer and a first metal layer and patterning to form a first grid electrode, a second grid electrode and the bottom electrode through masking; forming light-doped structures on partial regions of the first conducting layer; depositing an isolating layer, and etching to form a first, a second and a third through holes through masking and penetrating through the isolating layer and the grid insulating layer; depositing a second metal layer and patterning to form a source electrode, a drain electrode, a second conducting layer, and a first, a second and a third conductive poles through masking; forming a semiconductor layer for connecting the first source electrode with the drain electrode; depositing a first and a second flat layers, and etching to form a fourth, a fifth and a sixth through holes through masking and penetrating through the first and the second flat layers; depositing the second conducting layer and patterning to form a first, a second and a third electrodes through masking. With the adoption of the method for manufacturing the AMOLED apparatus, the process of n-type doping and secondary etching is omitted, thus the cost can be saved.