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发明公开
CN102263124A 半导体器件 有权

半导体器件
摘要：
本发明的目的在于提供具有减小的尺寸并展现卓越的阻断电压能力的半导体器件。本发明的半导体器件包括有源区10和隔离区30之间的边缘端接结构20，该边缘端接结构20包括正向偏压部40的边缘端接结构和反向偏压部50的边缘端接结构。多个场限制环(FLR)41、51以及多个场板(FP)44、54设置在正向偏压部40的边缘端接结构和反向偏压部的边缘端接结构中。多个FP 44的最靠近反向偏压部50的边缘端接结构的第一正向FP 45形成为朝隔离区30侧延伸。多个FP 54的最靠近正向偏压部40的边缘端接结构的第一反向FP 55形成为朝隔离区10侧延伸。第一反向FP 55在施加正向电压时终止耗尽层从有源区10扩展。第一正向FP 45在施加反向电压时终止耗尽层从隔离区30扩展。
摘要（英）：

The invention aims at providing a semiconductor device that has a reduced size and exhibits a superior blocking voltage capability. A semiconductor device includes an edge termination structure 20 between an active region 10 and an isolation region 30, the edge termination structure 20 being composed of an edge termination structure for a forward bias section 40 and an edge termination structure for a reverse bias section 50. A plurality of field limiting rings (FLRs) 41, 51 and a plurality of field plates (FPs) 44, 54 are provided in the edge termination structure for the forward bias section 40 and the edge termination structure for the reverse bias section 50. A first forward FP 45 that is the nearest of the plurality of FPs to the edge termination structure for the reverse bias section is formed to extend towards the isolation region side 30. A first reverse FP 55 that is the nearest of the plurality of FPs 54 to the edge termination structure for the forward bias section 40 is formed to extend towards the active region side 10. The first reverse FP 45 stops the depletion layer expanding from the active region 30 on application of a forward voltage.

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