The invention discloses a semiconductor laser capable of realizing wide-angle uniform shining and a light field splicing method. The semiconductor laser comprises a base the upper surface of which is an arc surface and at least one set of laser array unit sets, wherein each laser array unit set comprises at least one laser array unit; each array unit comprises a triangular wedge-shaped tube seat,a semiconductor laser core set, two electrode leads and a quartz scattering piece, wherein the semiconductor laser core set is located on the upper surface of the tube seat, the two electrode leads are led out from the two ends of each semiconductor laser core set, and the quartz scattering piece covers on the semiconductor laser core set. The invention has the advantages that the asymmetric character of the light fields of the semiconductor laser in two directions is fully utilized, diffident quantities of laser arrays are respectively used for splicing in the slow axis and fast axis directions of the laser in accordance with a specific curve support and a unit array with a specific angle so as to realize equivalent diffusion angle, uniform-radiation wide angle and high-power light source irradiation in the slow axis and fast axis directions.