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发明公开
CN102272352A CVD装置 失效 - 权利终止

CVD装置
摘要：
本发明的目的在于提供一种能够在不导致生产成本高昂及装置大型化的情况下飞跃性地提高基座的品质和生产性的CVD装置。在该CVD装置中，在通过支承部件支承碳质基材(5)的状态下向内部导入气体，由此在碳质基材(5)的表面形成SiC覆膜，所述CVD装置的特征在于，所述支承部件具备载置所述碳质基材(5)并支承碳质基材下部的下部支承部件(6)和支承所述碳质基材(5)上部的上部支承部件(13)，该上部支承部件(13)设置在所述碳质基材(5)的外周缘，并且在该上部支承部件(13)形成有V字状的槽(13d)，在由该V字状的槽(13d)构成的碳质基材配置空间(17)内，以具有充分的游隙的状态配置所述碳质基材(5)。
摘要（英）：

Provided is a CVD apparatus by which qualities of a susceptor and productivity can be significantly improved without causing a large increase of production cost and a size increase of the apparatus. The CVD apparatus forms a SiC film on the surface of a carbonaceous base material (5) by introducing a gas into the apparatus in a state where the carbonaceous base material (5) is supported by means of a supporting member. The supporting member has a lower supporting member (6), which has the carbonaceous base material (5) placed thereon and supports the lower portion of the carbonaceous base material, and an upper supporting member (13), which supports the upper portion of the carbonaceous base material (5). The upper supporting member (13) is arranged on the outer circumference of the carbonaceous base material (5), a V-shaped groove (13d) is formed on the upper supporting member (13), and in the carbonaceous base material arranging space (17) composed of the V-shaped groove (13d), the carbonaceous base material (5) is placed with a sufficient clearance.

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