The invention discloses a latching amplification circuit applied to a memory and a reading method. The circuit comprises a plurality of latching modules for a local bit line and an amplification module for a global bit line, wherein the latching modules for the local bit line are used for charging storage units on the local bit line through the local bit line according to applied pre-charging pulse signals, and sending received level signals to the amplification module for the global bit line according to applied control signals until the level signals are fed back by the storage units on the local bit line through the local bit line; the fed-back level signals are used for indicating data which is stored in the storage units; the amplification module for the global bit line is used for receiving the level signals, which are sent by the latching modules for the local bit line, of the storage units through the global bit line, and outputting the level signals to external equipment after amplification and latching. When the data, which is stored in the storage units, is read by the latching amplification circuit, the electric energy consumption is reduced.