利索-全球专利检索

  1. Login
  2. Sign Up
Invention Publication
CN102405536A 间接带隙半导体发光二极管 无效 - 驳回 复审申请

间接带隙半导体发光二极管
Abstract:
一种间接带隙半导体发光二极管(401)。所述间接带隙半导体发光二极管(401)包括多个部分，所述多个部分包括间接带隙半导体构成的p掺杂部分(412)、间接带隙半导体构成的本征部分(414)、以及间接带隙半导体构成的n掺杂部分(416)。所述本征部分(414)安置在所述p掺杂部分(412)与所述n掺杂部分(414)之间，并与所述p掺杂部分(412)形成p-i结(430)且与所述n掺杂部分(416)形成i-n结(434)。所述p-i结(430)和所述i-n结(434)配置为，当所述间接带隙半导体发光二极管(401)反向偏置时，促进所述本征部分(414)中至少一个热电子-空穴等离子体的形成，并且配置为促进热电子与空穴的复合而产生的发光。
Abstract(English):

Provided is an indirect-bandgap-semiconductor light-emitting diode (401). The indirect-bandgap-semiconductor, light-emitting diode (401) includes a plurality of portions including a p-doped portion (412) of an indirect-bandgap semiconductor, an intrinsic portion (414) of the indirect-bandgap semiconductor, and a n-doped portion (416) of the indirect-bandgap semiconductor. The intrinsic portion (414) is disposed between the p-doped portion (412) and the n-doped portion (414) and forms a p-i junction (430) with the p-doped portion (412), and an i-n junction (434) with the n-doped portion (416). The p-i junction (430) and the i-n junction (434) are configured to facilitate formation of at least one hot electron-hole plasma in the intrinsic portion (414) when the indirect-bandgap-semiconductor, light-emitting diode (401) is reverse biased and to facilitate luminescence produced by recombination of a hot electron with a hole.

Patent Agency Ranking
0/0