The invention provides an insulated gate bipolar transistor of a method for manufacturing the same. The IGBT comprises an N-type base region, a P-type base region(28), a back P+ anode region(21), an N+ cathode region(26), a gate oxide(24), an anode(20), a gate electrode(25) and a cathode(27). The N-type base region is composed of an N+ diffusion residue layer(29), an N- base region(23)and an N+ buffer layer(22), and the outward dosage concentrations of the N+ diffusion residue layer(29) and the N+ buffer layer(22)are increased gradually from the boundary of the boundary. In the IGBT, the N+ diffusion residue layer(29) is arranged on the right side of the N- base region(23), improving the ion doping concentration of an N-type right side, reducing the resistance effects of a junction type field effect transistor (JEFT), and accordingly, reducing the conduction voltage drop of the IGBT effectively, and at the same time, reducing the forward blocking voltage(withstand voltage)effects of the IGBT to be minimum.