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CN102544014A 半导体存储器器件及其制造方法 无效 - 撤回

半导体存储器器件及其制造方法
摘要：
一种半导体存储器器件及其制造方法。该半导体存储器器件包括：被置于半导体衬底上的第一导电型阱和第二导电型阱；分别被置于第一导电型阱和第二导电型阱上的第一栅极和第二栅极；被置于第一导电型阱中且位于第一栅极的一侧的第二导电型第一离子注入区和被置于第一导电型阱中且位于第一栅极的另一侧的第二导电型第二离子注入区；被置于第二导电型阱中且位于第二栅极的一侧的第一导电型第一离子注入区和被置于第二导电型阱中且位于第二栅极的另一侧的第一导电型第二离子注入区；以及电连接第二导电型第二离子注入区与第一导电型第一离子注入区的电线。该半导体存储器器件能够在低电压环境中稳定操作且将单元尺寸与外围电路区的尺寸最小化。
摘要（英）：

A semiconductor memory device and a method of manufacturing the same. The semiconductor memory device includes a first conductive type well and a second conductive type well disposed on and/or over a semiconductor substrate; a first gate and a second gate disposed on and/or over the first conductive type well and the second conductive type well, respectively; a second conductive type first ion implantation region disposed in the first conductive type well at one side of the first gate and a second conductive type second ion implantation region disposed in the first conductive type well at the other side of the first gate; a first conductive type first ion implantation region disposed in the second conductive type well at one side of the second gate and a first conductive type second ion implantation region disposed in the second conductive type well at the other side of the second gate; and a line electrically connecting the second conductive type second ion implantation region with the first conductive type first ion implantation region. The semiconductor memory device is adapted to operate stably in a low voltage environment and which minimizes a cell size and a size of a peripheral circuit region.

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