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CN102597306A 处理室的清洁 无效 - 撤回

处理室的清洁
摘要：
一种利用清洁气体清洁在等离子处理室内部区域中配置的至少一个组件的方法，所述清洁气体包括氟气，其中所述处理室具有至少一个电极和对应电极来生成等离子体用于等离子体处理，特别是用于对表面积大于1m2的平面基底进行CVD-或者PECVD-处理，其特征在于，用分压大于5mbar的气态氟化合物冲击内部区域。在另一种利用清洁气体清洁在处理室内部区域中配置的至少一个组件的表面的方法V中，所述清洁气体为氟气，其中所述处理室设置有至少一个电极和对应电极用于生成等离子体，特别是用于对表面积大于1m2的平面基底进行CVD-或者PECVD-处理，借助控温装置对于氟气进行热活化，其中待清洁的组件具有＜350℃的温度。
摘要（英）：

The method for cleaning at least one component arranged in the inner region of a plasma process chamber by using a cleaning gas which comprises fluorine gas, the process chamber having at least one electrode and counter-electrode for producing a plasma for the plasma treatment, in particular the CVD or PECVD treatment, of flat substrates with a surface of over 1 m<2>, is distinguished by the fact that the inner region is subjected to gaseous fluorine compounds with a partial pressure of greater than 5 mbar. In a further method V for cleaning at least one component arranged in the inner region of a process chamber by means of a cleaning gas which comprises fluorine gas, the process chamber having at least one electrode and counter-electrode for producing a plasma, in particular for the CVD or PECVD treatment, of flat substrates with a surface of over 1 m<2>, it is provided that the fluorine gas is thermally activated by means of a temperature control medium, the component to be cleaned being at a temperature of < 350 DEG C.

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