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发明公开
CN102751234A 半导体装置及其制造方法、固体摄像装置以及电子设备 有权

半导体装置及其制造方法、固体摄像装置以及电子设备
摘要：
本发明涉及半导体装置及其制造方法、固体摄像装置以及电子设备，所述制造方法包括：接合第一和第二半导体晶片，第一半导体晶片包括第一基板和第一绝缘层，第二半导体晶片包括第二基板和第二绝缘层；形成第三绝缘层；进行蚀刻以使得在第二布线层上留下第二绝缘层，由此形成第一连接孔；在第一连接孔上形成绝缘膜；对第二绝缘层和绝缘膜进行蚀刻以形成第二连接孔且使第二布线层露出；在连接孔内部形成第一过孔，且使第一过孔连接至第二布线层，形成于第一基板的另外一个表面处的第一连接孔的直径大于形成于第三绝缘层处的第一连接孔的直径。根据本发明，可对层叠有半导体晶片的电路进行连接，同时抑制因形成过孔时的蚀刻而对基板或布线造成的影响。
摘要（英）：

A method of manufacturing a semiconductor device includes bonding a first semiconductor wafer including a first substrate and a first insulating layer formed to contact one surface of the first substrate, and a second semiconductor wafer including a second substrate and a second insulating layer, forming a third insulating layer, performing etching so that the second insulating layer remains on a second wiring layer, forming a first connection hole, forming an insulating film on the first connection hole, performing etching of the second insulating layer and the insulating film, forming a second connection hole, and forming a first through hole via formed in inner portions of the connection holes and connected to the second wiring layer, wherein a diameter of the first connection hole formed on the other surface of the first substrate is greater than a diameter of the first connection hole formed on the third insulating layer. According to the invention, the circuit provided with a semiconductor wafer can be connected, and the influence on the substrates and the layout caused by the etching during the forming of the through hole can be prevented.

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