The invention provides a manufacturing process for an N-type solar cell, comprising the following steps of: 1) cleaning and texturizing a silicon slice; 2) printing a phosphorus paste at a position needing to be printed with a gate line, on the back field surface of the silicon slice, wherein the back field surface is a surface doped with a phosphorus impurity; 3) diffusing phosphorus and boron; 4) chemically cleaning the surface and engraving the side by laser, and insulating the upper surface from the lower surface; 5) coating films on the both surfaces; 6) printing a front-surface electrode and a back-surface electrode; and 7) sintering. In the manufacturing process, the phosphorus paste is printed at a position needing to be printed with the gate line, on the back field surface of the silicon slice before performing the step of diffusing phosphorus and boron, so that a highly-doped deep diffusion area is formed in the printed area of the phosphorus paste on the cell slice, lowly-doped shallow diffusion areas are formed in other areas, a height heterojunction is formed on the surface of the silicon slice, and the N-type solar cell obtains a selective back field after the diffusion is concluded, thus increasing the photoelectric conversion efficiency of the cell. Compared with a corrosive paste, the phosphorus paste is low in price, so that production cost can be decreased. The invention further provides an N-type solar cell.