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CN103003928A 薄膜半导体器件的制造方法、薄膜半导体阵列基板的制造方法、结晶硅薄膜的形成方法以及结晶硅薄膜的形成装置 无效 - 撤回

  • Patent Title: 薄膜半导体器件的制造方法、薄膜半导体阵列基板的制造方法、结晶硅薄膜的形成方法以及结晶硅薄膜的形成装置
  • Patent Title (English): Thin film semiconductor device manufacturing method, thin film semiconductor array substrate manufacturing method, crystal silicon thin film forming method, and crystal silicon thin film forming device
  • Application No.: CN201180004127.5
    Application Date: 2011-06-02
  • Publication No.: CN103003928A
    Publication Date: 2013-03-27
  • Inventor: 尾田智彦 , 川岛孝启
  • Applicant: 松下电器产业株式会社
  • Applicant Address: 日本大阪府
  • Assignee: 松下电器产业株式会社
  • Current Assignee: 松下电器产业株式会社
  • Current Assignee Address: 日本大阪府
  • Agency: 北京市中咨律师事务所
  • Agent 徐健; 段承恩
  • International Application: PCT/JP2011/003109 2011.06.02
  • International Announcement: WO2012/164626 JA 2012.12.06
  • Date entered country: 2012-04-05
  • Main IPC: H01L21/336
  • IPC: H01L21/336 ;  H01L21/20 ;  H01L29/786
薄膜半导体器件的制造方法、薄膜半导体阵列基板的制造方法、结晶硅薄膜的形成方法以及结晶硅薄膜的形成装置
Abstract:
本发明提供一种薄膜半导体器件的制造方法、薄膜半导体阵列基板的制造方法、结晶硅薄膜的形成方法以及结晶硅薄膜的形成装置，包括：准备基板(10)的工序；形成栅电极(11)的工序；形成栅极绝缘膜(12)的工序；形成源电极(19)和漏电极(20)的工序；形成硅薄膜(13)的工序；以及一边使激光对硅薄膜进行相对扫描，一边将激光照射到硅薄膜，使硅薄膜结晶化而形成结晶硅薄膜(15)的工序。激光为连续振荡型的激光，激光的强度分布在第一区域(R1)中为相对扫描方向的前方侧与后方侧对称的强度分布，在第二区域(R2)中为相对扫描方向的前方侧与后方侧非对称的强度分布。并且，在第二区域(R2)中，相对扫描方向的后方侧的激光强度分布的积分强度值(S2)大于相对扫描方向的前方侧的激光强度分布的积分强度值(S1)。
Abstract(English):

A thin film semiconductor device manufacturing method comprises: a step of preparing a substrate (10); a step of forming a gate electrode (11); a step of forming a gate insulator film (12); a step of forming a source electrode (19) and a drain electrode (20); a step of forming a silicon thin film (13); and a step of, while relative scanning a laser beam on the silicon thin film, illuminating the silicon thin film with the laser beam, crystallizing the silicon thin film, and forming a crystal silicon thin film (15). The laser beam is a continuous wave (CW) laser beam. The intensity distribution of the laser beam is such that the fore side and the aft side of the relative scan direction are symmetrical in a first region (R1), and asymmetrical in a second region (R2). In the second region (R2), an integral intensity value (S2) of the laser beam intensity distribution in the aft side of the relative scan direction is greater than an integral intensity value (S1) of the laser beam intensity distribution in the fore side thereof.

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