The invention discloses a device and a method for growing a gallium nitride single crystal by using a suspending lining sleeve ammonothermal method. The device comprises an autoclave, a lining sleeve, a resistance furnace and a cooling container, wherein the cooling container is used for cooling and transferring the lining sleeve; and the cooling container is a liquid nitrogen tank or a Dewar flask. The method comprises the following steps: (1) adding a substrate into the lining sleeve, welding a top cover and an orifice of the lining sleeve, placing in a vacuum glove box, adding a halogenated ammonium salt and ammonia liquid through a charging pipe, sealing the charging pipe, placing the charging pipe into the cooling container to which a refrigerant is filled in advance, and sealing the cooling container; (2) filling the ammonia liquid into the cooled autoclave; and (3) taking out the cooled lining sleeve, placing the cooled lining sleeve into the autoclave, sealing the autoclave, placing the autoclave into the resistance furnace, setting the temperature of a growth area and a dissolving area to obtain the gallium nitride single crystal after growing. When the gallium nitride single crystal is grown by using the device and the method, the lining sleeve can be guaranteed to be transferred to the autoclave under conditions of approximate constant temperature and does not leak.