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发明公开
CN103135364A 光刻工艺参数确定方法及装置 无效 - 驳回 复审申请

光刻工艺参数确定方法及装置
摘要：
本发明提供一种光刻工艺参数确定方法及装置，属于液晶显示领域。其中，该光刻工艺参数确定方法包括：在一张基板上形成多个不同膜厚的光刻胶区域；在预设的曝光模式下对所述基板上的光刻胶进行曝光显影，并测量每一光刻胶区域显影图案对应的光刻指标参数；确定所述光刻指标参数为最优时所对应的光刻胶膜厚和曝光模式。本发明的技术方案能够在仅使用一片基板的条件下，获取光刻指标参数最优时所对应的光刻工艺参数，大大减少了光刻胶和基板的使用，节约了测试时间。
摘要（英）：

The invention provides a photolithographic process parameter determination method and a photolithographic process parameter determination device. The invention belongs to the field of liquid crystal display. The photolithographic process parameter determination method comprises the steps that: a plurality of photo-resist regions with different film thicknesses are formed on a substrate; the photo-resist on the substrate is subjected to exposure and development under a preset exposure mode, and photolithography indicator parameters corresponding to each of the photo-resist region developed patterns are measured; and photo-resist film thickness and exposure mode corresponding to optimal photolithography indicator parameters are determined. With the technical scheme provided by the invention, under a condition that only one substrate is used, photolithographic process parameters corresponding to optimal photolithography indicator parameters can be obtained, such that the use of photo-resist and substrate can be greatly reduced, and testing time is saved.

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