The invention discloses a single-event transient injection simulation method for high-frequency circuits. The single-event transient injection simulation method includes creating a device model of transistors injected with heavy ions; solving equations of a numerical computation model of semiconductor devices to acquire an I-V characteristic curve of the device model; calibrating I-V characteristics of the device model; adding a single-even transient physical model caused by the heavy ions to the numerical computation model of the semiconductor devices; acquiring a time-varying curve of transient drain current of the transistors with different grid widths under different LET (linear energy transfer) values of the heavy ions and different drain bias conditions by means of numerical computation; creating a single-event transient characteristic database of the transistor according to the time-varying curve; and exchanging data between the single-event transient characteristic database of the transistors and a circuit model by the aid of a Verilog-A model of a circuit simulation program, and the like. The single-event transient injection simulation method has the advantages that single-event transient injection is implemented, and problems of long time consumption and difficulty in convergence in an existing device/circuit hybrid simulation method are effectively solved.