The invention provides a redundancy interconnection structure for interconnection among silicon chips. The redundancy interconnection structure for the interaction among the silicon chips comprises a plurality of main interconnection channels, a plurality of redundancy interconnection channels, a plurality of anti-fuse elements and a plurality of fuse elements, wherein the lower end of each main interconnection channel is connected to each bonding pad which is connected by welding spots and welded balls and arranged on the lower surface of each silicon chip, the upper end of each main interconnection channel is connected to a metal interconnection line which is connected with one bonding pad arranged on the upper surface of one silicon chip, each redundancy interconnection channel is formed beside each main redundancy interconnection channel arranged in the main interconnection channels, each anti-fuse element is formed in one metal interconnection line which is arranged between the upper end of each anti-fuse element arranged in the main interconnection channels and the upper end of each redundancy interconnection channel in the redundancy interconnection channels, each fuse element of the fuse elements is formed at the lower end of each main interconnection channel of the main interconnection channels and one bonding pad which is connected between the bonding pad arranged on the lower surface of each silicon chip and the welding spot of one welded ball. According to the redundancy interconnection structure for interconnection among the silicon chips, a circuit structure can be simplified, and the redundancy interconnection structure for interconnection among the silicon chips is better compatible with an existing manufacturing technology of semiconductors.