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发明公开
CN103346071A 含有SiNx插入层的InN半导体器件的制备方法 无效 - 撤回

含有SiNx插入层的InN半导体器件的制备方法
摘要：
本发明公开了含有SiNx插入层的InN半导体器件的制备方法，步骤是：（1）将m面蓝宝石衬底置于MOCVD反应室中，通入氢气与氨气的混气，对衬底进行热处理；（2）在衬底上生长厚度为15-40nm，温度为600-800℃的低温AlN成核层；（3）在低温成核层上生长厚度为90-150nm，温度为1025-1200℃的高温AlN成核层；（4）在成核层之上生长厚度为1000-2500nm，镓源流量为5-80μmol/min，氨气流量为1000-10000sccm的m面GaN缓冲层；（5）在m面GaN之上用PECVD在200-250℃淀积3-9s的SiNx插入层；（6）在所述插入层之上生长厚度为3000-6000nm，镓源流量为90-250μmol/min，氨气流量为1000-3000sccm的m面GaN缓冲层；（7）之后再生长厚度为15-30nm，铟源流量为90-250μmol/min，氨气流量为1000-5000sccm的InN材料。本发明的InN质量高，可用于制作发光器件。
摘要（英）：

The invention discloses a method for preparing an InN semiconductor device containing a SiNx inserted layer. The method comprises the steps that (1) an m-face sapphire substrate is placed in an MOCVD reaction chamber, and heat treatment is carried out on the substrate through mixing of hydrogen and ammonia gas; (2) a low-temperature AlN nucleating layer with the thickness of 15-40nm and the temperature of 600-800 DEG C is arranged on the substrate in a growth mode; (3) a high-temperature AlN nucleating layer with the thickness of 90-150nm and the temperature of 1025-1200 DEG C is arranged on the low-temperature AlN nucleating layer in a growth mode; (4) an m-face GaN buffer layer is arranged above each nucleating layer in a growth mode, the thickness of the buffer layer is 1000-2500nm, the gallium source flow of the buffer layer is 5-80 micro mol/min, and the ammonia gas flow of the buffer layer is 1000-10000 sccm; (5) the SiNx inserted layer is arranged above the m-face GaN buffer layer, and the SiNx inserted layer is deposited for 3-9s in 200-250 DEG C by means of PECVD; (6) an m-face GaN buffer layer is arranged above the inserted layer in a growth mode, the thickness of the buffer layer is 3000-6000nm, the gallium source flow of the buffer layer is 90-250 micro mol/min, and the ammonia gas flow of the buffer layer is 1000-3000 sccm; (7) then, InN materials are arranged in a growth mode, the thickness of the InN materials is 15-30nm, the indium source flow of the InN materials is 90-250 micro mol/min, and the ammonia gas flow of the InN materials is 1000-5000 sccm. The InN quality is high, and the InN materials can be used for manufacturing luminescent devices.

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