Provided is a highly reliable semiconductor device, wherein cracks are not easily generated in a sealing resin and the sealing resin is not easily peeled from a substrate, even in the cases where a semiconductor element is repeatedly operated at a high temperature and has heat cycle applied thereto. This semiconductor device is provided with: a semiconductor element substrate, which has a front surface electrode pattern formed on one surface of an insulating substrate, and a rear surface electrode pattern formed on the other surface of the insulating substrate; a semiconductor element, which is firmly bonded to the surface of the front surface electrode pattern, said surface being on the reverse side of the insulating substrate, by having a bonding material therebetween; and a sealing resin, which covers the semiconductor element and the semiconductor element substrate. At a position on the front surface electrode pattern, said position having potential equivalent to that of a front surface electrode pattern portion at a position where the semiconductor element is bonded thereto, an insulating terminal table is provided, said insulating terminal table being formed with a relay terminal composed of a conductive material, and an insulating member that insulates the relay terminal and the front surface electrode pattern from each other. Wiring from the semiconductor element to the outside is led out via the relay terminal.