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发明公开
CN103368073A GaAs衬底上实现1.3微米附近发光的量子阱结构及其制备方法 无效 - 撤回

GaAs衬底上实现1.3微米附近发光的量子阱结构及其制备方法
摘要：
本发明涉及一种GaAs衬底上实现1.3微米附近发光的量子阱结构及其制备方法，该量子阱结构采用InxGa1-xAs1-yBiy作为量子阱的阱层材料，采用AlzGa1-zAs作为量子阱的垒层材料；其制备方法包括：（1）在GaAs衬底上生长GaAs缓冲层和AlGaAs势垒层；（2）生长InxGa1-xAs1-yBiy势阱层；（3）继续重复生长N-1个周期的AlGaAs势垒层和InGaAsBi势阱层；（4）最后再生长AlGaAs势垒层，完成量子阱结构的生长。本发明的量子阱结构可获得比传统AlGaAs/InGaAs量子阱更长的发光波长，实现波长达1.3微米附近的发光；制备方法操作工艺简单，易控制。
摘要（英）：

The invention relates to a quantum well structure capable of realizing emission of light with wavelength close to 1.3 micrometers on a GaAs substrate and a preparation method of the quantum well structure. The quantum well structure uses InGa<1-x>As<1-y>Bi as the well layer materials of a quantum well and AlGa<1-z>As as barrier layer materials of the quantum well. The preparation method comprises the steps of 1) growing a GaAs buffer layer and an AlGaAs barrier layer on the GaAs substrate; 2) growing an InGa<1-x>As<1-y>Bi potential well layer; 3) continuously and repetitively growing AlGaAs barrier layers and InGaAsBi potential well layers of N-1 cycles; and 4) finally growing an AlGaAs barrier layer to complete the growth of the quantum well structure. The quantum well provided by the invention can be used for obtaining light with wavelength longer than the wavelength of light obtained by using the traditional AlGaAs/InGaAs quantum well and can realize the emission of the light with the wavelength close to 1.3 micrometers. The preparation method has the advantages of simple operation process and easiness in control.

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