The invention discloses a high-voltage NLDMOS electrostatic protection structure which is arranged in a multi-finger shape on a silicon substrate. According to the high-voltage NLDMOS electrostatic protection structure, high-voltage N traps and high-voltage P traps are arranged alternately on the upper portion of the silicon substrate, N type injection regions and P type injection regions are arranged alternately in the high-voltage N trap on the left outmost side of a device, N type injection regions and P type injection regions are arranged alternately in the high-voltage N trap on the right outmost side of the device, N type injection regions are formed in the high-voltage N trap in the middle of the device, N type injection regions and P type injection regions are arranged alternately in each high-voltage P trap, a polysilicon gate is formed above the junction of each high-voltage N trap and a corresponding high-voltage P trap, the N type injection regions and P type injection regions in each high-voltage P trap are connected and then connected to the ground together, the P type injection regions in the high-voltage N trap on the left outmost side of the device and one N type injection region in the high-voltage N trap are connected and then connected to a static electricity input end together, the P type injection regions in the high-voltage N trap on the right outmost side of the device and one N type injection region in the high-voltage N trap are connected and then connected to the static electricity input end together, the N type injection regions in the high-voltage N trap in the middle of the device are connected to the static electricity input end, and the polysilicon gates are connected with a signal end. The high-voltage NLDMOS electrostatic protection structure is capable of improving the static electricity self-protection capacity of an existing NLDMOS device.