The invention relates to semiconductor technology, in particular to a partial SOI (silicon on insulator) super junction high-voltage power semiconductor device. The partial SOI super junction high-voltage power semiconductor device is characterized by comprising a plurality of N+ pads and a P-type electric field shielding layer, the N+ pads are uniformly embedded into a P-type substrate, the P-type electric field shielding layer is arranged in the P-type substrate, the upper surface of the P-type electric field shielding layer is connected with a P-type body area and the lower surface of an N-type buffer area close to a source end, and the lower surface of the P-type electric field shielding layer is connected with the upper surface of a buried oxide layer. The partial SOI super junction high-voltage power semiconductor device has the advantages that the doping concentration of a drift region is increased by changing electric field distribution, the voltage resistance of the device is improved, on resistance is reduced, the area of the device is decreased, and cost is reduced. The invention is particularly applicable to the partial SOI super junction high-voltage power semiconductor device.