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发明公开
CN103469173A 空穴导电特性氧化镓膜的制备方法及空穴导电特性氧化镓膜 有权

  • 专利标题： 空穴导电特性氧化镓膜的制备方法及空穴导电特性氧化镓膜
  • 专利标题（英）： Preparation method of gallium oxide film with hole conduction characteristic as well as gallium oxide film with hole conduction characteristic
  • 申请号： CN201310414275.5
    申请日： 2013-09-12
  • 公开(公告)号： CN103469173A
    公开(公告)日： 2013-12-25
  • 发明人: 梁红伟 , 夏晓川 , 柳阳 , 申人升 , 杜国同 , 胡礼中
  • 申请人： 大连理工大学
  • 申请人地址： 辽宁省大连市高新园区凌工路2号
  • 专利权人： 大连理工大学
  • 当前专利权人： 大连理工大学
  • 当前专利权人地址： 辽宁省大连市高新园区凌工路2号
  • 代理机构： 大连星海专利事务所
  • 代理商 裴毓英
  • 主分类号： C23C16/40
  • IPC分类号： C23C16/40
空穴导电特性氧化镓膜的制备方法及空穴导电特性氧化镓膜
摘要：
本发明提供一种空穴导电特性氧化镓膜的制备方法及空穴导电特性氧化镓膜，空穴导电特性氧化镓膜的制备方法包括以下步骤：将衬底置于密封反应室内的生长托盘上，加热托盘到高于氧化镓膜预期生长温度10-200℃，对衬底进行热处理；将托盘温度降到预定生长温度后，在预设压强范围内继续对反应室抽气；向反应室内通入镓源、氧源和掺杂源，实现氧化镓膜的外延生长；当氧化镓膜生长过程结束后，对氧化镓膜进行原位热处理或直接将氧化镓膜缓慢降温取样或取样后再进行热处理，得到空穴导电特性氧化镓膜。本发明步骤科学、合理，克服了现有技术的诸多问题，提供了一种有效的受主掺杂途径，能制备具有不同空穴浓度的氧化镓膜。
摘要（英）：

The invention provides a preparation method of a gallium oxide film with a hole conduction characteristic as well as the gallium oxide film with the hole conduction characteristic. The preparation method of the gallium oxide film with the hole conduction characteristic comprises the following steps: placing a substrate in a growing tray in a sealed reaction chamber, heating the tray to a temperature which is 10-200 DEG C higher than the expected growing temperature of the gallium oxide film, and thermally treating the substrate; after reducing the temperature of the tray to the predetermined growing temperature, continuously exhausting air to the reaction chamber in a predetermined pressure range; introducing a gallium source, an oxygen source and a doping source to the reaction chamber so as to realize the epitaxial growth of the gallium oxide film; when the growing process of the gallium oxide film is finished, carrying out in-situ thermal treatment to the gallium oxide film or directly cooling and sampling the gallium oxide film slowly or carrying out thermal treatment after sampling to obtain the gallium oxide film with the hole conduction characteristic. The method provided by the invention is scientific and reasonable in step, overcomes many problems in the prior art, provides an effective acceptor doping path, and can be used for preparing gallium oxide films with different hole concentrations.

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