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发明公开
CN103489899A 氧化物半导体的前体组合物、薄膜晶体管基板及其制法 审中-实审

氧化物半导体的前体组合物、薄膜晶体管基板及其制法
摘要：
本发明涉及氧化物半导体的前体组合物、薄膜晶体管基板及其制法。根据本发明的示例性实施方案的薄膜晶体管基板包括：设置于绝缘衬底上的包括金属的半导体层，与所述半导体层交叠的栅电极，以及与所述半导体层交叠的源电极和漏电极，其中所述半导体层中的所述金属包括铟(In)、锌(Zn)和锡(Sn)，和所述半导体层中铟(In)与所述金属的摩尔比(R,)小于约20%，并且更特别地，所述半导体层中铟(In)与金属的摩尔比(R,)为约5%－约13%。
摘要（英）：

A thin film transistor substrate according to an exemplary embodiment of the present invention includes a semiconductor layer including metal disposed on an insulating substrate, a gate electrode overlapping the semiconductor layer, and a source electrode and a drain electrode overlapping the semiconductor layer, wherein the metal in the semiconductor layer comprises indium (In), zinc (Zn), and tin (Sn), and a molar ratio (R, R[mol %]=[In]/[In+Zn+Sn]/100) of indium (In) to the metals in the semiconductor layer is less than about 20%, and more specifically, the molar ratio (R, R[mol %]=[In]/[In+Zn+Sn]/100) of indium (In) of the metals in the semiconductor layer is about 5% to about 13%.

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