The invention discloses an LED based on a photonic crystal-single-layer graphene structure, and belongs to the technical field of LEDs. The LED sequentially comprises a silicon dioxide protective layer, monoatomic-layer graphene, a contact layer (not essential), an LED chip p-GaN layer, an LED chip multi-quantum well light emitting layer, an LED chip n-GaN layer and a sapphire substrate from top to bottom, wherein the LED chip p-GaN layer is of a photonic crystal structure, and the protective layer covers all the portions except for a positive electrode and a negative electrode. The structure of combining the photonic crystal and the single-layer graphene is adopted, so that the aim of greatly improving the light emitting efficiency and being free of using an ITO at the same time is achieved.