The invention relates to the technical field of microelectronic packaging, in particular to a high-power press-fitted IGBT packaging module comprising a top cover, a submodule, gate pins, and a bottom base. The bottom base is covered with the top cover. The submodule is disposed between the top cover and the bottom base. The gate pins are disposed in sockets of an insulating bottom plate. The submodule comprises a top molybdenum plate, a chip, a bottom molybdenum plate, a conducting sliver plate and a PBI high-performance plastic frame. The top molybdenum plate, the chip, the bottom molybdenum plate and the conducting sliver plate are sequentially press-fitted from top to bottom in a recess of the PBI high-performance plastic frame. The upper surface of the top molybdenum plate contacts with the lower surface of the top cover through electrodes. The lower surface of the conducting sliver plate in the submodule is press-fitted to the upper surface of a middle projection of the bottom base. The high-power press-fitted IGBT packaging module has the advantages that production and assembly is simpler, connection reliability is better, and radiating performance is better.