The invention discloses a storage device with a three-dimensional array structure. The three-dimensional array structure comprises storage layers and transistor structures arranged between the storage layers. Each storage layer is connected with a common electrode. Each transistor structure comprises transistors sharing a common collecting electrode structure and a common base electrode structure. Each transistor structure also comprises an emitting electrode structure. The emitting electrode structures are separated from the common collecting electrode structures through the common base electrode structures. When the required current direction reverses, the addressing function of a three-dimensional array is not changed, and the definitions of collecting electrodes and emitting electrodes are not required to be exchanged.