A semiconductor device (10) comprises a drift layer (22) having a first surface with an active region (14) and a plurality of junction barrier element recesses (40), the drift layer being doped with a doping material of a first conductivity type and associated with an edge termination region (16) that is substantially laterally adjacent the active region. A Schottky layer (24) is over the active region of the first surface to form a Schottky junction. A plurality of first doped regions (30) extend into the drift layer about corresponding ones of the plurality of junction barrier element recesses (40) wherein the plurality of first doped regions are doped with a doping material of a second conductivity type, which is opposite the first conductivity type, and form an array of junction barrier elements in the drift layer below the Schottky junction. A well (34) ia formed in the drift layer in the edge termination region, the well having guard rings (36) and being doped with the doping material of the second conductivity type where the plurality of guard rings are formed in the well, wherein the guard rings are coplanar with the junction barrier element recesses.