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发明公开
CN103794723A 一种相变存储器单元及其制备方法 无效 - 驳回

一种相变存储器单元及其制备方法
摘要：
本发明提供一种相变存储器单元及其制备方法，所述的相变存储器单元的存储介质层是由SbxTe1-x层和TiyTe1-y层交替堆叠组成的超晶格薄膜结构，形成稳定的层状(SbxTe1-x)-(TiyTe1-y)相变材料。其中0.4≤x≤0.8，0.33≤y≤0.56。SbxTe1-x层及TiyTe1-y层的厚度介于1nm～10nm之间。该种方法制备出的超晶格(SbxTe1-x)-(TiyTe1-y)相变材料具有和传统Ge-Sb-Te相变材料完全不同的相变机理，因此获得的相变存储器件具有更低功耗、更高的相变速、更高的保持力、更长寿命等优点。
摘要（英）：

The invention provides a phase change memory unit and a method for manufacturing the phase change memory unit. A memory medium layer of the phase change memory unit is a superlattice thin film structure which is composed of an Sb[x]Te[1-x] layer and a Ti[y]Te[1-y] layer, and then a stable layered (Sb[x]Te[1-x])-(Ti[y]Te[1-y]) phase change material is obtained, wherein 0.4<=x<=0.8, 0.33<=y<=0.56, the thickness of the Sb[x]Te[1-x] layer is between 1 nm and 10 nm, and the thickness of the Ti[y]Te[1-y] layer is between 1 nm and 10 nm. The phase-change mechanism of the superlattice (Sb[x]Te[1-x])-(Ti[y]Te[1-y]) phase change material manufactured with the method is completely different from that of a traditional Ge-Sb-Te phase change material, and thus an obtained phase change memory device has the advantages of being lower in power consumption, higher in phase change speed, higher in retentivity, longer in service life and the like.

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