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发明公开
CN103839789A 选区SiGeSn层及其形成方法 无效 - 驳回

选区SiGeSn层及其形成方法
摘要：
本发明提出一种选区SiGeSn层及其形成方法。其中该方法包括以下步骤：提供顶部具有SiGe层的衬底；在SiGe层表面形成掩膜，并在掩膜上形成开口；向SiGe层表层注入含有Sn元素的原子、分子、离子或等离子体，以在开口位置形成SiGeSn层。该方法能够形成厚度较薄、质量较好的SiGeSn层，具有简单易行、成本低的优点。
摘要（英）：

The invention provides a SiGeSn layer of a selected area and a method for forming the SiGeSn layer of the selected area. The method comprises the following steps of providing a substrate, wherein a SiGe layer is arranged on the top of the substrate; forming a mask on the surface of the SiGe layer, and forming an opening in the mask; filling the surface layer of the SiGe layer with atoms with Sn elements, or molecules with Sn elements, or ions with Sn elements or plasmas with Sn elements so that the SiGeSn layer can be formed in the opening. According to the method for forming the SiGeSn layer of the selected area, the SiGeSn layer with the small thickness and high quality can be formed, and the method has the advantages of being easy to implement and low in cost.

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