The invention relates to a schottky barrier diode and a method of manufacturing the same. The schottky barrier diode includes an n-type epitaxial layer disposed at a first surface of an n+ type silicon carbide substrate, a plurality of n type pillar areas disposed in the n-type epitaxial layer at a first portion of a first surface of the n+type silicon carbide substrate, a plurality of p+ areas disposed at a surface of the n-type epitaxial layer and separated from the n type pillar area, a schottky electrode disposed on the n-type epitaxial layer and the p+ area, and an ohmic electrode disposed at a second surface of the n+type silicon carbide substrate. A doping density of the n type pillar area is larger than a doping density of the n-type epitaxial layer.