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发明公开
CN103890943A 基于异质结氧化物的忆阻元件 失效 - 权利终止 转让

基于异质结氧化物的忆阻元件
摘要：
提供了包括设置在第一电极和第二电极之间的活性区的忆阻元件。活性区包括第一金属氧化物的转换层和第二金属氧化物的导电层，其中第一金属氧化物的金属离子不同于第二氧化物的金属离子。忆阻元件基于在第一金属氧化物和第二金属氧化物之间的氧化物异质结而在低电阻状态下展示出非线性电流-电压特性。还提供了包括忆阻元件的多层结构。
摘要（英）：

Memristive elements are provided that include an active region disposed between a first electrode and a second electrode. The active region includes an switching layer of a first metal oxide and a conductive layer of a second metal oxide, where a metal ion of the first metal oxide differs from a metal ion of the second metal oxide. The memristive element exhibits a nonlinear current-voltage characteristic in the low resistance state based on the oxide hetero-junction between the first metal oxide and the second metal oxide. Multilayer structures that include the memristive elements also are provided.

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