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发明公开
CN103891144A 用于调整半导体晶体管的驱动电流的方法和装置 失效 - 权利终止 转让

用于调整半导体晶体管的驱动电流的方法和装置
摘要：
本发明公开了用于修复晶体管的方法和装置，包括：给PFET的源极施加第一电压，给PFET的栅极施加第二电压，以及给PFET的漏极施加第三电压达预定时间。其中第一电压大于第二电压，并且第二电压大于第三电压。本发明人已经确定，通过施加这些电压，被捕获于栅极电介质内的空穴将会减少。以此方式，可以修复半导体结构或者使其恢复至或接近最初的操作特性。另一种实施例是通过给NFET的漏极施加第一电压、给NFET的栅极施加第二电压以及给NFET的源极施加第三电压达预定时间来修复NFET晶体管的方法和装置。第一电压大于第二电压，而第二电压大于第三电压。如同在第一实施例中所示出的，本发明的目的是修复晶体管。在NFET的情形中，电子在正常的操作期间聚积于栅极电介质上。通过按照所描述的方式来施加电压，可以修复晶体管以使其在处于或接近于最初的规范下操作。
摘要（英）：

A method and apparatus for repairing transistors comprises applying a first voltage to a source of a PFET, a second voltage to the gate of a PFET and a third voltage to the drain of a PFET for a predetermined time. Wherein the first voltage is greater than the second voltage and the second voltage is greater than the third voltage. By applying these voltages the inventors have determined that the holes trapped inside the gate dielectric will be reduced. In this manner the semiconductor structure may be repaired or returned to the at or near the original operating characteristics. An additional embodiment is a method and apparatus for repairing NFET transistors by applying a first voltage to a drain of a NFET a second voltage to the gate of the NFET and a third voltage to the source of an NFET a predetermined time. The first voltage is greater than the second voltage and the second voltage is greater than the third voltage. As was illustrated in the first embodiment the objective of the invention is to repair the transistor. In the case of the NFET the electrons during normal operation build up on the gate dielectric. By applying the voltages in the manner described the transistor may be repaired to operate at or near the original specifications.

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