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发明公开
CN103951429A 一种低温烧结低损耗微波介质陶瓷材料 失效 - 权利终止

一种低温烧结低损耗微波介质陶瓷材料
摘要：
本发明公开了一种低温烧结低损耗微波介质陶瓷材料，其化学式为Ni0.04Zn0.96TiNb2O8+(1～4)wt％B2O3，采用化学原料ZnO、NiO、Nb2O5和TiO2，于900～940℃烧结。本发明在ZnTiNb2O8系陶瓷的基础上，使用B2O3做为烧结助剂，提供一种低温烧结的低损耗微波介质陶瓷材料及其制备方法，并同时保持了相对较好的介电性能。其烧结温度为900～940℃，介电常数为30～36，品质因数为32,100～39,500GHz，谐振频率温度系数为-32～-39×10-6/℃。此外，本发明的制备工艺简单，过程无污染，具有广阔的应用前景。
摘要（英）：

The invention discloses a low-temperature sintered low-loss microwave dielectric ceramic material. The chemical formula of the low-temperature sintered low-loss microwave dielectric ceramic material is Ni0.04Zn0.96TiNb2O8+(1-4)wt%B2O3; the low-temperature sintered low-loss microwave dielectric ceramic material is obtained by sintering chemical raw materials ZnO, NiO, Nb2O5 and TiO2 at a temperature ranging from 900 to 940 DEG C. The invention provides a low-temperature sintered low-loss microwave dielectric ceramic material and a preparation method by using B2O3 as a sintering auxiliary on the basis of the ZnTiNb2O8 ceramics; the relatively good dielectric property of the low-temperature sintered low-loss microwave dielectric ceramic material is retained. The sintering temperature of the ceramic material ranges from 900 to 940 DEG C, the dielectric constant of the ceramic material is 30-36, the quality factor of the ceramic material is 32,100-39,500GHz, and the temperature coefficient of resonance frequency of the ceramic material ranges from minus 32*10<-6>/DEG C to minus 39*10<-6>/DEG C. Besides, the preparation method of the low-temperature sintered low-loss microwave dielectric ceramic material is simple and free of pollution in process, and thus has wide application prospect.

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