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CN103951431A 一种利用H3BO3掺杂降低铁板钛矿型Mg5Nb4O15微波介质陶瓷烧结温度新方法 无效 - 撤回

  • 专利标题： 一种利用H3BO3掺杂降低铁板钛矿型Mg5Nb4O15微波介质陶瓷烧结温度新方法
  • 专利标题（英）： Novel method for reducing sintering temperature of pseudobrookite-type Mg5Nb4O15 microwave dielectric ceramics by H3BO3 doping
  • 申请号： CN201410169886.2
    申请日： 2014-04-25
  • 公开(公告)号： CN103951431A
    公开(公告)日： 2014-07-30
  • 发明人: 吴海涛 , 梅全静 , 李从英 , 郭靖栋
  • 申请人： 济南大学
  • 申请人地址： 山东省济南市南辛庄西路336号
  • 专利权人： 济南大学
  • 当前专利权人： 济南大学
  • 当前专利权人地址： 山东省济南市南辛庄西路336号
  • 主分类号： C04B35/495
  • IPC分类号： C04B35/495 ;  C04B35/63
一种利用H3BO3掺杂降低铁板钛矿型Mg5Nb4O15微波介质陶瓷烧结温度新方法
摘要：
本发明属于电子陶瓷制备与应用技术领域，尤其涉及一种利用H3BO3掺杂降低铁板钛矿型Mg5Nb4O15微波介质陶瓷烧结温度新方法。本发明技术方案为：基于湿化学工艺利用H3BO3掺杂降低铁板钛矿型Mg5Nb4O15微波介质陶瓷烧结温度方法，包括以下步骤：1)配制Mg离子的柠檬酸水溶液；2)配制Nb离子的柠檬酸水溶液；3)H3BO3掺杂Mg-Nb前驱体溶胶凝胶制备、介质陶瓷纳米前驱体的合成及陶瓷烧结。首先合成H3BO3掺杂的Mg5Nb4O15陶瓷前驱粉体，合成温度低、陶瓷颗粒均匀、分散性好、物相纯、粉体具有纳米粒度(约50nm)并具有高比表面能，呈现出较高活性等显著优势；在后续烧结过程中凸显H3BO3作为烧结助熔剂作用，可以显著降低烧结温度100-200℃，并保持其良好微波介电性能。
摘要（英）：

The invention belongs to the technical field of electronic ceramic preparation and application, and in particular relates to a novel method for reducing the sintering temperature of pseudobrookite-type Mg5Nb4O15 microwave dielectric ceramics by H3BO3 doping. According to the technical solution disclosed by the invention, the method for reducing the sintering temperature of the pseudobrookite-type Mg5Nb4O15 microwave dielectric ceramics by H3BO3 doping based on a wet chemical process comprises the following steps of 1) preparing an aqueous citric acid solution of Mg ions; 2) preparing an aqueous citric acid solution of Nb ions; and 3) preparing H3BO3-doped Mg-Nb precursor sol-gel, synthesizing a dielectric ceramic nanometer precursor and sintering ceramic. According to the novel method, the H3BO3-doped Mg5Nb4O15ceramic precursor powder firstly synthesized has the advantages of low synthesis temperature, uniform ceramic particles, good dispersion and pure phase. The powder has nanometer size (about 50nm) and has high specific surface energy, presents significant advantages of relatively high activity and highlights the effect of H3BO3 as a sintering flux in a subsequent sintering process. The sintering temperature can be significantly reduced by 100-200 DEG C and good microwave dielectric properties are maintained.

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