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发明公开
CN103956323A 半导体器件及其形成方法、非瞬时计算机可读存储介质 失效 - 权利终止 转让

半导体器件及其形成方法、非瞬时计算机可读存储介质
摘要：
本发明公开了半导体器件及其形成方法、非瞬时计算机可读存储介质。本发明具体公开了形成异质结双极晶体管地方法，该方法包括提供包括至少本征基极区域和发射极基座区域的结构。在本征基极区域上形成堆叠。堆叠包括多晶硅层和顶部牺牲氧化物层。在结构中形成沟槽。沟槽限定本征基极区域和堆叠的范围。在堆叠周围的两个区域形成非本征基极。通过选择性外延生长工艺形成非本征基极，以在沟槽之上产生桥。桥连接所述两个区域。在堆叠中提供开口。开口暴露本征基极区域的一部分。在开口中形成发射极。
摘要（英）：

The invention discloses a semiconductor and a manufacturing method thereof, and a non-instantaneous computer readable storage medium, and particularly relates to a method of forming a heterojunction bipolar transistor. The method includes providing a structure comprising at least an intrinsic base region and an emitter pedestal region. A stack is formed on the intrinsic base region. The stack comprises a polysilicon layer and a top sacrificial oxide layer. A trench is formed in the structure. The trench circumscribes the intrinsic base region and the stack. An extrinsic base is formed at two regions around the stack. The extrinsic base is formed by a selective epitaxial growth process to create a bridge over the trench. The bridge connects the two regions. An opening is provided in the stack. The opening exposes a portion of the intrinsic base region. An emitter is formed in the opening.

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